inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK566 features drain current C i d =2.9a@ t c =25 drain source voltage- : v dss = 800v(min) fast switching speed description designed especially for high voltage,high speed applications, such as off-line switching power supplies , ups,ac and dc motor controls,relay and solenoid drivers. absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage 800 v v gs gate-source voltage-continuous 20 v i d drain current-continuous 2.9 a p d total dissipation @t c =25 78 w t j max. operating junction temperature 150 t stg storage temperature -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK566 electrical characteristics t c =25 unless otherwise specified symbo l parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 800 v v gs (th ) gate threshold voltage v ds = v gs ; i d = 1ma 2.1 4.0 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 1.5a 3.5 4.0 i gss gate-body leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 800v; v gs =0 250 a v sd forward on-voltage i s = 2.9a; v gs =0 1.05 1.3 v tr rise time vgs=10v;id=2.1a; rl=50 40 60 ns ton turn-on time 70 105 ns tf fall time 60 80 ns toff turn-off time 170 220 ns pdf pdffactory pro www.fineprint.cn
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